Withdrawn
Standard
Most Recent
IEEE 641:1987
IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays
Summary
New IEEE Standard - Inactive-Withdrawn.
This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.
This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.
Notes
Inactive-Withdrawn
Technical characteristics
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Publication Date | 10/07/1988 |
| Cancellation Date | 12/03/1992 |
| Edition | |
| Page Count | 34 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
| Brochures |
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Previous versions
07/10/1988
Withdrawn
Most Recent